US 12,471,321 B2
Oxide thin film transistor including photocatalyst layer and method for manufacturing the same
Hyun Jae Kim, Seoul (KR); Jong Bin An, Seoul (KR); Sujin Jung, Seoul (KR); Kunho Moon, Goyang-si (KR); Jong Hyuk Ahn, Seoul (KR); I Sak Lee, Paju-si (KR); and Dong Hyun Choi, Seoul (KR)
Assigned to UIF (University Industry Foundation), Yonsei University, Seoul (KR)
Filed by UIF (University Industry Foundation), Yonsei University, Seoul (KR)
Filed on Feb. 8, 2023, as Appl. No. 18/107,020.
Prior Publication US 2023/0253505 A1, Aug. 10, 2023
Int. Cl. H10D 30/67 (2025.01); H10D 30/01 (2025.01)
CPC H10D 30/6755 (2025.01) [H10D 30/031 (2025.01); H10D 30/6729 (2025.01); H10D 30/673 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A method for manufacturing an oxide thin film transistor, the method comprising:
forming a gate electrode on a substrate;
forming an insulating layer on the gate electrode;
forming an oxide semiconductor thin film on the insulating layer through a first sputtering process by using a first mask;
forming an electrode on the oxide semiconductor thin film through a second sputtering process by using the first mask used for forming the oxide semiconductor thin film;
applying an oxidizer to an area of the electrode; and
annealing the area of the electrode, to which the oxidizer is applied.