US 12,471,320 B2
Thin film transistor and display panel
Fengjuan Liu, Beijing (CN); Jianye Zhang, Beijing (CN); Yuhang Lu, Beijing (CN); Hongda Sun, Beijing (CN); and Pan Xu, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN)
Appl. No. 18/024,990
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Mar. 31, 2022, PCT No. PCT/CN2022/084425
§ 371(c)(1), (2) Date Mar. 7, 2023,
PCT Pub. No. WO2023/184345, PCT Pub. Date Oct. 5, 2023.
Prior Publication US 2024/0282862 A1, Aug. 22, 2024
Int. Cl. H10D 30/67 (2025.01)
CPC H10D 30/6755 (2025.01) [H10D 30/6733 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A thin film transistor, comprising: a base substrate, and an active layer and a gate on the base substrate,
wherein the active layer comprises a first part and a second part, a conductivity of the second part is greater than a conductivity of the first part; an orthographic projection of the gate on the base substrate covers an orthographic projection of the first part on the base substrate, and the orthographic projection of the gate on the base substrate does not overlap an orthographic projection of the second part on the base substrate; and
the first part comprises a plurality of first sub-parts, and two sides of any one of the plurality of first sub-parts in a trend direction of the active layer are each connected to the second part.