US 12,471,311 B2
Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer
Yen-Ru Lee, Hsinchu (TW); Chii-Horng Li, Hsinchu County (TW); Chien-I Kuo, Hsinchu County (TW); Heng-Wen Ting, Pingtung County (TW); Jung-Chi Tai, Taipei (TW); Lilly Su, Hsinchu County (TW); and Yang-Tai Hsiao, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Feb. 28, 2024, as Appl. No. 18/590,099.
Application 16/994,531 is a division of application No. 16/160,900, filed on Oct. 15, 2018, granted, now 10,749,013, issued on Aug. 18, 2020.
Application 18/590,099 is a continuation of application No. 17/873,982, filed on Jul. 26, 2022, granted, now 11,948,999.
Application 17/873,982 is a continuation of application No. 16/994,531, filed on Aug. 14, 2020, granted, now 11,430,878, issued on Aug. 30, 2022.
Application 16/160,900 is a continuation of application No. 14/850,726, filed on Sep. 10, 2015, granted, now 10,103,249, issued on Oct. 16, 2018.
Prior Publication US 2024/0204084 A1, Jun. 20, 2024
Int. Cl. H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 30/62 (2025.01) [H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a substrate;
an isolation structure laterally surrounding a portion of the substrate;
a source/drain epitaxial structure over the portion of the substrate, wherein the source/drain epitaxial structure has a wavy top surface profile, and wherein the source/drain epitaxial structure forms a non-linear interface with the portion of the substrate;
a capping layer lining a portion of the source/drain epitaxial structure, wherein the capping layer has a first portion in contact with a top surface of the isolation structure; and
a contact over and in contact with the source/drain epitaxy structure and the capping layer.