US 12,471,310 B2
Method of making a FinFET device including a step of removing a portion of a fin
Chia Tai Lin, Taichung (TW); Yih-Ann Lin, Jhudong Township (TW); An-Shen Chang, Jubei (TW); Ryan Chia-Jen Chen, Chiayi (TW); and Chao-Cheng Chen, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Feb. 19, 2024, as Appl. No. 18/581,104.
Application 14/882,144 is a division of application No. 14/162,598, filed on Jan. 23, 2014, granted, now 9,190,496, issued on Nov. 17, 2015.
Application 18/581,104 is a continuation of application No. 17/403,318, filed on Aug. 16, 2021, granted, now 11,908,939.
Application 17/403,318 is a continuation of application No. 16/876,753, filed on May 18, 2020, granted, now 11,094,825, issued on Aug. 17, 2021.
Application 16/876,753 is a continuation of application No. 15/817,648, filed on Nov. 20, 2017, granted, now 10,658,509, issued on May 19, 2020.
Application 15/817,648 is a continuation of application No. 14/882,144, filed on Oct. 13, 2015, granted, now 9,825,173, issued on Nov. 21, 2017.
Prior Publication US 2024/0194785 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 30/62 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 86/01 (2025.01)
CPC H10D 30/62 (2025.01) [H10D 30/024 (2025.01); H10D 64/01 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 86/011 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
providing a first fin and a second fin on a substrate, wherein a first hard mask layer is disposed directly on the first fin;
forming a dielectric layer directly on the first fin, the first hard mask layer and the second fin such that the dielectric layer covers the first fin, the first hard mask layer and the second fin;
removing a first portion of the dielectric layer, wherein the dielectric layer covers the second fin after the removing of the first portion of the dielectric layer, wherein a portion of the first hard mask layer disposed directly on the first fin is exposed after the removing of the first portion of the dielectric layer; and
after removing the first portion of the dielectric layer, removing at least a portion of the first fin.