US 12,471,308 B2
Semiconductor-on-insulator device with lightly doped extension region
Ralf Rudolf, Dresden (DE)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Sep. 7, 2022, as Appl. No. 17/939,011.
Claims priority of application No. 21195259 (EP), filed on Sep. 7, 2021.
Prior Publication US 2023/0075374 A1, Mar. 9, 2023
Int. Cl. H10D 30/60 (2025.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01)
CPC H10D 30/601 (2025.01) [H01L 21/7624 (2013.01); H10D 30/0285 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an insulator layer;
a semiconductor layer formed on the insulator layer, the semiconductor layer comprising a first region of a first conductivity type, a second region of a second conductivity type, and a lightly doped extension region of the first conductivity type and separating the first region and the second region along a lateral x-axis; and
a dielectric structure laterally surrounding the semiconductor layer,
wherein at least one of the first region and the lightly doped extension region is formed at a distance to the dielectric structure along a lateral y-axis orthogonal to the x-axis, and
wherein along the x-axis between the second region and the first region, a lateral extension of the semiconductor layer along the y-axis increases with increasing distance to the second region.