US 12,471,304 B2
High electron mobility transistor (HEMT) device for increasing the Schottky diode current and method of forming the same
Wei Jen Chen, Tainan (TW); and Kai Lin Lee, Kinmen County (TW)
Assigned to United Microelectronics Corp., Hsinchu (TW)
Filed by United Microelectronics Corp., Hsinchu (TW)
Filed on Aug. 16, 2022, as Appl. No. 17/888,523.
Claims priority of application No. 111125329 (TW), filed on Jul. 6, 2022.
Prior Publication US 2024/0014307 A1, Jan. 11, 2024
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 30/015 (2025.01); H10D 64/01 (2025.01); H10D 64/411 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A high electron mobility transistor (HEMT) device, comprising:
a substrate having at least one active region;
a channel layer disposed on the at least one active region;
a barrier layer disposed on the channel layer; and
a gate structure disposed on the barrier layer and extended along a first direction in a top view, wherein the gate structure comprises:
a metal layer; and
a P-type group III-V semiconductor layer vertically disposed between the metal layer and the barrier layer, wherein the P-type group III-V semiconductor layer comprises a lower portion and an upper portion on the lower portion, and the upper portion has a top area greater than a top area of the lower portion, wherein
an area of the metal layer is greater than a top area of the P-type group III-V semiconductor layer.