US 12,471,302 B2
Silicon carbide device with trench gate structure
Ralf Siemieniec, Villach (AT); Wolfgang Jantscher, Villach (AT); and David Kammerlander, Villach (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Nov. 22, 2021, as Appl. No. 17/532,333.
Application 17/532,333 is a division of application No. 16/832,653, filed on Mar. 27, 2020, granted, now 11,211,468.
Claims priority of application No. 102019108062.2 (DE), filed on Mar. 28, 2019.
Prior Publication US 2022/0085186 A1, Mar. 17, 2022
Int. Cl. H10D 62/832 (2025.01); H01L 21/04 (2006.01); H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 62/17 (2025.01); H10D 84/00 (2025.01)
CPC H10D 12/031 (2025.01) [H01L 21/0465 (2013.01); H01L 21/047 (2013.01); H10D 30/668 (2025.01); H10D 62/393 (2025.01); H10D 62/8325 (2025.01); H10D 84/144 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A silicon carbide device, comprising:
a silicon carbide body comprising a trench gate structure extending from a first surface into the silicon carbide body, a body region in contact with an active sidewall of the trench gate structure, a source region in contact with the active sidewall and located between the body region and the first surface, and a shielding region of a conductivity type of the body region,
wherein the shielding region extends from the first surface into the silicon carbide body,
wherein the shielding region laterally directly adjoins the source region and the body region,
wherein the shielding region is in contact with an inactive sidewall of a further trench gate structure,
wherein the body region comprises a first body portion directly below the source region and distant from the active sidewall,
wherein in at least one horizontal plane parallel to the first surface, a dopant concentration in the first body portion is at least 150% of a reference dopant concentration in the body region at the active sidewall,
wherein in the at least one horizontal plane parallel to the first surface, a horizontal extension of the first body portion is at least 20% of a total horizontal extension of the body region,
wherein in the at least one horizontal plane, a lateral dopant distribution in a portion of the shielding region directly adjoining the first body portion deviates by not more than ±10% from a dopant concentration in the first body portion.