US 12,471,299 B2
Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the same
Han-Jong Chia, Hsinchu (TW); and Mauricio Manfrini, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jun. 26, 2024, as Appl. No. 18/755,379.
Application 18/755,379 is a division of application No. 18/354,573, filed on Jul. 18, 2023, granted, now 12,057,471.
Application 18/354,573 is a division of application No. 17/230,477, filed on Apr. 14, 2021, granted, now 11,756,987, issued on Sep. 12, 2023.
Claims priority of provisional application 63/045,320, filed on Jun. 29, 2020.
Prior Publication US 2024/0347581 A1, Oct. 17, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 1/68 (2025.01); H01L 21/02 (2006.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01)
CPC H10D 1/684 (2025.01) [H01L 21/02601 (2013.01); H10B 51/30 (2023.02); H10B 53/30 (2023.02); H10D 1/692 (2025.01); H10D 30/024 (2025.01); H10D 30/031 (2025.01); H10D 30/0415 (2025.01); H10D 30/6211 (2025.01); H10D 30/6757 (2025.01); H10D 30/701 (2025.01); H10D 64/033 (2025.01); H10D 64/689 (2025.01); H10D 30/62 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A ferroelectric fin field-effect transistor (FinFET) comprising:
a semiconductor substrate having a first surface;
a semiconductor fin extending in a vertical direction from the first surface of the semiconductor substrate, the semiconductor fin comprising a source region, a drain region, and a channel region disposed between the source region and the drain region;
seed metal particles disposed on multiple surfaces of the channel region;
a ferroelectric (FE) layer disposed on the seed metal particles and directly contacting portions of the channel region exposed through the seed metal particles; and
a gate electrode layer disposed on the FE layer,
wherein the seed metal particles have an average particle size ranging from about 1 angstrom to about 10 angstroms.