US 12,471,292 B2
Phase-change memory structure and phase-change memory device including the same
Changseung Lee, Suwon-si (KR); Kiyeon Yang, Suwon-si (KR); Youngjae Kang, Suwon-si (KR); Hajun Sung, Suwon-si (KR); and Dongho Ahn, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 11, 2023, as Appl. No. 18/298,642.
Claims priority of application No. 10-2022-0122871 (KR), filed on Sep. 27, 2022.
Prior Publication US 2024/0107778 A1, Mar. 28, 2024
Int. Cl. H10B 63/10 (2023.01); H10B 63/00 (2023.01)
CPC H10B 63/10 (2023.02) [H10B 63/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A phase-change memory structure, comprising:
a lower electrode and an upper electrode, the lower electrode and the upper electrode spaced apart from each other; and
a phase-change material stack between the lower electrode and the upper electrode, the phase-change material stack including a plurality of phase-change layers, at least two phase-change layers of the plurality of phase-change layers having different phase-change temperatures, and a plurality of barrier layers between the plurality of phase-change layers,
wherein the at least two phase-change layers of the plurality of phase-change layers have different thicknesses.