US 12,471,290 B2
Ferroelectric device and semiconductor device
Shunpei Yamazaki, Setagaya (JP); Tomonori Nakayama, Atsugi (JP); Masahiro Takahashi, Atsugi (JP); and Hitoshi Kunitake, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 18/030,334
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Oct. 12, 2021, PCT No. PCT/IB2021/059304
§ 371(c)(1), (2) Date Apr. 5, 2023,
PCT Pub. No. WO2022/084801, PCT Pub. Date Apr. 28, 2022.
Claims priority of application No. 2020-176354 (JP), filed on Oct. 20, 2020; and application No. 2020-193541 (JP), filed on Nov. 20, 2020.
Prior Publication US 2023/0380180 A1, Nov. 23, 2023
Int. Cl. H10B 53/30 (2023.01)
CPC H10B 53/30 (2023.02) 17 Claims
OG exemplary drawing
 
1. A ferroelectric device comprising:
an insulating film;
a first conductor over the insulating film;
a metal nitride film over the first conductor;
a second conductor over the metal nitride film;
a first insulator over the first conductor, the metal nitride film, and the second conductor; and
a second insulator over the first insulator,
wherein the first conductor, the metal nitride film, and the second conductor are surrounded by the insulating film, the first insulator, and the second insulator,
wherein the metal nitride film has ferroelectricity,
wherein the metal nitride film comprises a first element, a second element, and nitrogen,
wherein the first element is one or more elements selected from Group 13 elements,
wherein the second element is one or more elements selected from Group 2 elements to Group 6 elements and Group 13 elements other than the first element,
wherein the first conductor and the second conductor each comprise nitrogen,
wherein the first insulator comprises aluminum and oxygen, and
wherein the insulating film and the second insulator each comprise silicon and nitrogen.