US 12,471,282 B2
Microelectronic devices, memory devices, and 3D NAND flash memory devices
Haitao Liu, Boise, ID (US); and Kunal R. Parekh, Boise, ID (US)
Assigned to Lodestar Licensing Group LLC, Evanston, IL (US)
Filed by Lodestar Licensing Group LLC, Evanston, IL (US)
Filed on Sep. 25, 2023, as Appl. No. 18/474,080.
Application 18/045,417 is a division of application No. 17/062,222, filed on Oct. 2, 2020, granted, now 11,482,538, issued on Oct. 25, 2022.
Application 18/474,080 is a continuation of application No. 18/045,417, filed on Oct. 10, 2022, granted, now 11,770,932.
Prior Publication US 2024/0015972 A1, Jan. 11, 2024
Int. Cl. H10B 43/27 (2023.01); H01L 21/285 (2006.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01); H10D 64/64 (2025.01)
CPC H10B 43/27 (2023.02) [H01L 21/28537 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/40 (2023.02); H10D 64/64 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising conductive material and insulative material vertically alternating with the conductive material;
a cell pillar structure vertically extending through the stack structure and comprising:
fill material;
channel material surrounding outer sidewalls and an upper surface of the fill material; and
an outer material stack surrounding outer sidewalls of the channel material; and
a high work function (HWF) metal material vertically overlying the stack structure, the HWF metal material having a work function greater than or equal to about 4.7 electronvolts (eV) and comprising:
a first portion substantially continuously horizontally extending over the stack structure and the cell pillar structure, the first portion in physical contact with an upper surface of the channel material of the cell pillar structure; and
a second portion vertically projecting from the first portion and in physical contact with upper portions of the outer sidewalls of the channel material of the cell pillar structure and upper surfaces of the outer material stack.