US 12,471,280 B2
Method of manufacturing a semiconductor device with selectively formed nitride film
Yuta Kamiya, Nagoya Aichi (JP); Kenichiro Toratani, Yokkaichi Mie (JP); Kazuhiro Matsuo, Kuwana Mie (JP); Shoji Honda, Kuwana Mie (JP); Takuya Hirohashi, Ebina Kanagawa (JP); Borong Chen, Kawasaki Kanagawa (JP); and Kota Takahashi, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Jun. 20, 2022, as Appl. No. 17/844,585.
Claims priority of application No. 2022-045980 (JP), filed on Mar. 22, 2022.
Prior Publication US 2023/0309301 A1, Sep. 28, 2023
Int. Cl. H10B 43/27 (2023.01)
CPC H10B 43/27 (2023.02) 15 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a stacked film alternately including a plurality of insulators and a plurality of fourth films;
forming a hole in the stacked film;
forming a first portion of a charge storage film and a semiconductor layer in the hole;
removing the plurality of fourth films to form a plurality of concave portions in the stacked film;
etching surfaces of the plurality of insulators and the first portion from the plurality of concave portions using a substance including a halogen; and
forming a plurality of second portions of the charge storage film and a plurality of electrode layers in the plurality of concave portions,
wherein:
the insulators include oxygen,
the first portion and the second portions include nitrogen, and
the second portions are formed by alternately performing first processes and second processes, each of the first processes forming a portion of the second portions, and each of the second processes etching a portion of the second portions using a substance including a halogen.