US 12,470,847 B2
Image sensor device and methods of formation
Kuo-Cheng Lee, Tainan (TW); Ping-Hao Lin, Tainan (TW); Yun-Wei Cheng, Taipei (TW); and Bo-Ge Huang, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 24, 2023, as Appl. No. 18/189,662.
Prior Publication US 2024/0323555 A1, Sep. 26, 2024
Int. Cl. H04N 25/63 (2023.01); H04N 25/131 (2023.01); H04N 25/75 (2023.01); H10F 39/00 (2025.01)
CPC H04N 25/63 (2023.01) [H04N 25/75 (2023.01); H10F 39/8057 (2025.01); H04N 25/131 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor device, comprising:
a pixel sensor array; and
a black level correction (BLC) region, adjacent to the pixel sensor array, comprising:
a sensing region;
a light-blocking layer over the sensing region; and
an anti-reflection array, in the light-blocking layer, comprising a plurality of recessed portions in the light-blocking layer,
wherein a ratio of a depth of one or more recessed portions, of the plurality of recessed portions, to a thickness of the light-block layer is in a range from 0.5:1 to 0.9:1.