US 12,470,845 B2
High dynamic-range (HDR) pixel circuit, color-image sensor package structure, and method for operating HDR pixel circuit
Ming-Hsien Yang, Taichung (TW); Huan-En Lin, Kaohsiung (TW); Chia-Yu Wei, Tainan (TW); Chun-Hao Chou, Tainan (TW); and Kuo-Cheng Lee, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Mar. 7, 2024, as Appl. No. 18/599,126.
Prior Publication US 2025/0287118 A1, Sep. 11, 2025
Int. Cl. H04N 25/59 (2023.01); H04N 25/771 (2023.01)
CPC H04N 25/59 (2023.01) [H04N 25/771 (2023.01)] 20 Claims
OG exemplary drawing
 
19. A method for operating a high-dynamic range (HDR) pixel circuit, wherein the high-dynamic range pixel circuit comprises a pixel subcircuit and a light-responsive switch circuit, and the pixel subcircuit comprises a photodetector, a capacitor, and a source-follower transistor, the method comprising:
enabling the source-follower transistor using a power supply voltage provided by the light-responsive switch circuit in response to the HDR pixel circuit being in a low light illuminance;
enabling the source-follower transistor using a first voltage generated by the photodetector in response to the HDR pixel circuit being in a high light illuminance;
storing electric charges in the capacitor via an overflow current generated by the photodetector;
outputting a first voltage detected by the photodetector through the source-follower transistor; and
outputting a second voltage associated with the electric charges stored in the capacitor through the source-follower transistor.