US 12,470,301 B2
Local light biasing for silicon photomultiplier-based optical wireless communication
Yisheng Xue, San Diego, CA (US); Karoly Becze, Escondido, CA (US); Jing Sun, San Diego, CA (US); Xiaoxia Zhang, San Diego, CA (US); Junyi Li, Fairless Hills, PA (US); Morteza Soltani, San Diego, CA (US); Deepu Alex, San Diego, CA (US); and Jason Bush, Escondido, CA (US)
Assigned to Qualcomm Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Jan. 6, 2023, as Appl. No. 18/151,229.
Prior Publication US 2024/0235691 A1, Jul. 11, 2024
Int. Cl. H04B 10/60 (2013.01); H04B 10/11 (2013.01)
CPC H04B 10/60 (2013.01) [H04B 10/11 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A photodetector comprising:
a silicon photomultipier (SiPM) including an input sensor configured to detect a light signal and an output interface configured to produce an output signal proportional to an intensity of the light signal detected at the input sensor;
a controllable light source positioned to emit a biasing light signal within a field of view of the input sensor, wherein the controllable light source is configured to emit the biasing light signal within a sensitivity range of the SiPM; and
processing circuitry electronically coupled to the output interface of the SiPM and to the controllable light source, wherein the processing circuitry is configured to adjust an intensity of the biasing light signal emitted from the controllable light source in accordance with an analysis of the output signal.