US 12,470,247 B2
Transceiver
Dirk Wiegner, Schwaikheim (DE); and George Hotopan, Esslingen (DE)
Assigned to NOKIA SOLUTIONS AND NETWORKS OY, Espoo (FI)
Appl. No. 17/916,669
Filed by NOKIA SOLUTIONS AND NETWORKS OY, Espoo (FI)
PCT Filed Mar. 25, 2021, PCT No. PCT/EP2021/057782
§ 371(c)(1), (2) Date Oct. 3, 2022,
PCT Pub. No. WO2021/198026, PCT Pub. Date Oct. 7, 2021.
Claims priority of application No. 20205339 (FI), filed on Apr. 2, 2020.
Prior Publication US 2023/0163801 A1, May 25, 2023
Int. Cl. H04B 1/40 (2015.01); H04B 1/16 (2006.01)
CPC H04B 1/40 (2013.01) [H04B 1/1615 (2013.01); H04B 1/163 (2013.01); H03F 2200/451 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A transceiver, comprising:
a transmit signal path;
a receive signal path;
bidirectional amplification circuitry reconfigurable for use in both the transmit signal path or receive signal path; said amplification circuitry including at least one resonant tunnelling diode, wherein the amplification circuitry further comprises an adjustable attenuator, and the control circuitry is configured to set attenuation of the attenuator in dependence upon one or more of: network load and converter control; and
control circuitry configured to selectively couple the amplification circuitry into the transmit or receive path of the transceiver in dependence upon whether said transceiver is to operate to transmit or receive a signal, wherein
the control circuitry is configured to adjust a supply voltage associated with the at least one resonant tunnelling diode of the amplification circuitry depending on an operating mode of the transceiver, and
when the transceiver is to operate to transmit a signal, the control circuitry is configured to adjust the supply voltage associated with the at least one resonant tunnelling diode to a value such that the resonant tunnelling diode operates in a negative differential conductance region of an N-shaped current-voltage characteristic associated with the at least one resonant tunnelling diode.