US 12,470,232 B1
Polar codes for error correction in non-volatile memory devices
Chin-Jen Pang, Santa Clara, CA (US); and Nedeljko Varnica, San Jose, CA (US)
Assigned to Marvell Asia Pte Ltd, Singapore (SG)
Filed by Marvell Asia Pte Ltd, Singapore (SG)
Filed on Sep. 7, 2023, as Appl. No. 18/243,599.
Claims priority of provisional application 63/404,206, filed on Sep. 7, 2022.
Int. Cl. H03M 13/11 (2006.01); H03M 13/00 (2006.01); H03M 13/13 (2006.01)
CPC H03M 13/1125 (2013.01) [H03M 13/134 (2013.01); H03M 13/6566 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solid state drive (SSD) device, comprising:
a memory comprising a plurality of memory cells;
an encoder configured to encode information using a polar code to generate encoded information to be stored in the memory, wherein the polar code is constructed based on a plurality of channel models corresponding to different read channel scenarios, including at least a first channel model corresponding a first read channel scenario and a second channel model corresponding to a second read channel scenario, the second read channel scenario different from the first read channel scenario, and wherein the polar code is constructed further based on a probabilistic channel model generated based on distribution of probabilities p indicating respective probabilities that the encoded information is read from the memory using the first read channel scenario and the second read channel scenario; and
a controller configured to:
write the encoded information to memory cells in the memory, and
read the encoded information from the memory cells in the memory using a selected one of the first read channel scenario and the second read channel scenario.