US 12,470,196 B2
Acoustic wave device with wurtzite based piezoelectric layer
Michael David Hill, Emmitsburg, MD (US); Alexandre Augusto Shirakawa, Cardiff by the Sea, CA (US); Benjamin Paul Abbott, Irvine, CA (US); Stefan Bader, Fort Collins, CO (US); David Albert Feld, Los Altos, CA (US); and Kwang Jae Shin, Yongin (KR)
Assigned to Skyworks Global Pte. Ltd., Singapore (SG)
Filed by Skyworks Global Pte. Ltd., Singapore (SG)
Filed on Mar. 30, 2023, as Appl. No. 18/193,317.
Claims priority of provisional application 63/362,264, filed on Mar. 31, 2022.
Claims priority of provisional application 63/362,257, filed on Mar. 31, 2022.
Prior Publication US 2023/0353119 A1, Nov. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/02 (2006.01); C01B 32/907 (2017.01); H03H 9/17 (2006.01); H03H 9/25 (2006.01); H03H 9/56 (2006.01); H03H 9/64 (2006.01)
CPC H03H 9/02031 (2013.01) [C01B 32/907 (2017.08); H03H 9/02015 (2013.01); H03H 9/02543 (2013.01); H03H 9/02834 (2013.01); H03H 9/173 (2013.01); H03H 9/176 (2013.01); H03H 9/25 (2013.01); H03H 9/568 (2013.01); H03H 9/6483 (2013.01); C01P 2002/52 (2013.01); C01P 2006/40 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An acoustic wave device comprising:
a piezoelectric layer including a wurtzite structure, the wurtzite structure including aluminum nitride and silicon carbide; and
an electrode over the piezoelectric layer, the acoustic wave device configured to generate an acoustic wave.