US 12,470,178 B2
Hybrid configurable RF power amplifier
Jason Xiangdong Deng, Greensboro, NC (US)
Assigned to HUAWEI TECHNOLOGIES CO., LTD., Shenzhen (CN)
Filed by Huawei Technologies Co., Ltd., Shenzhen (CN)
Filed on Jul. 13, 2023, as Appl. No. 18/351,588.
Application 18/351,588 is a continuation of application No. PCT/US2021/013236, filed on Jan. 13, 2021.
Prior Publication US 2023/0361721 A1, Nov. 9, 2023
Int. Cl. H03F 1/32 (2006.01); H03F 1/56 (2006.01); H03F 3/24 (2006.01)
CPC H03F 1/32 (2013.01) [H03F 1/56 (2013.01); H03F 3/245 (2013.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A radio frequency (RF) power amplifier comprising:
a driver stage amplifier circuit;
a first power amplifier output stage circuit comprising a first array of bipolar junction transistors (BJTs);
a second power amplifier output stage circuit comprising a second array of BJTs;
an inter-stage impedance matching network connecting an output of the driver stage amplifier circuit to a first input of the first power amplifier output stage circuit and to a first input of the second power amplifier output stage circuit;
a first bias circuit connecting the output of the driver stage amplifier circuit to a second input of the first power amplifier output stage circuit, wherein the first bias circuit and the first power amplifier output stage circuit are configured to set a first quiescent point of each BJT in the first array of BJTs to a first value; and
a second bias circuit coupled to a second input of the second power amplifier output stage circuit, wherein the second bias circuit and the second power amplifier output stage circuit are configured to set a second quiescent point of each BJT in the second array of BJTs to a second value different from the first value.