US 12,469,811 B2
Package comprising wire bonds coupled to integrated devices
Yangyang Sun, San Diego, CA (US); Rong Zhou, Cary, NC (US); Li-Sheng Weng, San Diego, CA (US); and Lily Zhao, San Diego, CA (US)
Assigned to QUALCOMM INCORPORATED, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Mar. 26, 2021, as Appl. No. 17/213,875.
Prior Publication US 2022/0320026 A1, Oct. 6, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 23/16 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/14 (2013.01) [H01L 23/16 (2013.01); H01L 23/31 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 25/0655 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A package comprising:
a substrate comprising a cavity;
a first integrated device coupled to the substrate through a first plurality of pillar interconnects and a first plurality of solder interconnects, wherein the first integrated device comprises a first front side that faces in a direction towards the substrate;
a second integrated device coupled to the substrate through a second plurality of pillar interconnects and a second plurality of solder interconnects, wherein the second integrated device comprises a second front side that faces in a direction towards the substrate; and
a plurality of wire bonds coupled to the first front side of the first integrated device and the second front side of the second integrated device,
wherein the plurality of wire bonds is located between (i) at least part of the cavity of the substrate and the first front side of the first integrated device, and (ii) at least part of the cavity of the substrate and the second front side of the second integrated device,
wherein the plurality of wire bonds is located over the cavity of the substrate,
wherein the plurality of wire bonds comprises:
a first plurality of wire bonds coupled to the first integrated device and the second integrated device, wherein a portion of the first plurality of wire bonds is located at a first maximum vertical distance from a surface of the first integrated device; and
a second plurality of wire bonds coupled to the first integrated device and the second integrated device, wherein a portion of the second plurality of wire bonds is located at a second maximum vertical distance from the surface of the first integrated device,
wherein the second maximum vertical distance is different from the first maximum vertical distance.