US 12,469,803 B2
Energy harvest and storage device for semiconductor chips and methods for forming the same
Kuen-Yi Chen, Hsinchu (TW); Yi Ching Ong, Hsinchu (TW); Kuo-Ching Huang, Hsinchu (TW); and Harry-Hak-Lay Chuang, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on May 3, 2022, as Appl. No. 17/735,590.
Prior Publication US 2023/0361057 A1, Nov. 9, 2023
Int. Cl. H01L 23/58 (2006.01); H01L 23/64 (2006.01); H10D 1/68 (2025.01); H10N 15/10 (2023.01)
CPC H01L 23/642 (2013.01) [H01L 23/58 (2013.01); H10N 15/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure located over a substrate, wherein the semiconductor structure comprises a parallel connection of a first component and a second component, wherein:
the first component comprises a series connection of a diode and a capacitor that is selected from a metal-ferroelectric-metal capacitor and a metal-antiferroelectric-metal capacitor;
the second component comprises a battery structure that includes a first battery electrode layer and a second battery electrode layer that comprises a layer of a metallic material including at least one transition metal or a conductive metal oxide material; and
the second battery electrode layer is in direct contact with a semiconductor layer of the diode.
 
10. A semiconductor structure comprising a layer stack that includes, from one side to another:
a first battery electrode layer;
an energy storage medium layer;
a second battery electrode layer;
a diode layer stack including a p-n junction or a p-i-n junction therein;
a first capacitor electrode layer;
a node dielectric layer that comprises a ferroelectric material layer or an antiferroelectric material layer; and
a second capacitor electrode layer.
 
16. A semiconductor structure comprising a parallel connection of a first component and a second component, wherein:
the first component comprises a series connection of a diode and a capacitor;
the second component comprises a battery structure that includes a first battery electrode layer and a second battery electrode layer that comprises a layer of a metallic material including at least one transition metal or a conductive metal oxide material; and
the second battery electrode layer is in direct contact with a semiconductor layer of the diode.