| CPC H01L 23/564 (2013.01) [H01L 23/049 (2013.01); H01L 23/3107 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/072 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/73265 (2013.01); H02P 27/08 (2013.01)] | 20 Claims |

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1. A semiconductor device comprising:
a metal base substrate which includes a metal base, a first insulating layer provided on a surface of the metal base, a support conductor provided on a surface of the first insulating layer opposite to the surface on which the metal base is provided, and a second insulating layer provided in contact with the surface of the first insulating layer opposite to the surface on which the metal base is provided and a side surface of the support conductor to expose a surface of the support conductor opposite to the surface in contact with the first insulating layer;
a semiconductor element bonded to the support conductor;
a case provided outside the second insulating layer and in contact with the first insulating layer;
an external terminal attached to the case;
a sealing member filled in a region surrounded by the support conductor, the second insulating layer and the case; and
a wire provided in the sealing member and configured to connect to the external terminal to the semiconductor element,
wherein the side surface of the support conductor nearest to the case and a side surface of the case are connected by the second insulating layer, and
in a cross-sectional view, an upper surface of the second insulating layer is in contact with the sealing member, and the wire is provided directly above the upper surface of the second insulating layer.
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