US 12,469,800 B2
Semiconductor device
Zi-Jheng Liu, Taoyuan (TW); Jo-Lin Lan, Kaohsiung (TW); Yu-Hsiang Hu, Hsinchu (TW); and Hung-Jui Kuo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Oct. 11, 2023, as Appl. No. 18/485,291.
Application 16/272,935 is a division of application No. 15/289,173, filed on Oct. 8, 2016, granted, now 10,204,870, issued on Feb. 12, 2019.
Application 18/485,291 is a continuation of application No. 17/340,036, filed on Jun. 6, 2021, granted, now 11,817,399.
Application 17/340,036 is a continuation of application No. 16/272,935, filed on Feb. 11, 2019, granted, now 11,031,351, issued on Jun. 8, 2021.
Claims priority of provisional application 62/329,125, filed on Apr. 28, 2016.
Prior Publication US 2024/0038688 A1, Feb. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H01L 23/58 (2006.01); H01L 21/56 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5389 (2013.01); H01L 23/544 (2013.01); H01L 23/585 (2013.01); H01L 21/4853 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/5386 (2013.01); H01L 23/564 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2223/5446 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/19 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a molding compound;
a plurality of through vias embedded in the molding compound;
a seal ring structure over the molding compound and surrounding the through vias in a top view; and
a protection layer covering the seal ring structure and extending toward the molding compound in a cross-sectional view, wherein the protection layer is spaced apart from the through vias.