| CPC H01L 23/552 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01)] | 23 Claims |

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1. A method of making a semiconductor device, comprising: providing a substrate; disposing a semiconductor die over the substrate; depositing a first encapsulant over the semiconductor die; disposing a ferromagnetic film over the first encapsulant; and depositing a second encapsulant over the ferromagnetic film, wherein vertical side surfaces of the first encapsulant, second encapsulant, and ferromagnetic film are coplanar.
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