US 12,469,792 B2
Semiconductor device
Makoto Isozaki, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed by FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed on Jul. 28, 2022, as Appl. No. 17/876,228.
Application 17/876,228 is a continuation of application No. PCT/JP2021/024996, filed on Jul. 1, 2021.
Claims priority of application No. 2020-144178 (JP), filed on Aug. 28, 2020.
Prior Publication US 2022/0367372 A1, Nov. 17, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/14 (2006.01); H01L 23/367 (2006.01)
CPC H01L 23/5386 (2013.01) [H01L 23/142 (2013.01); H01L 23/367 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/85424 (2013.01); H01L 2224/85447 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an insulated circuit substrate, including
a base plate,
a resin layer disposed on a front surface of the base plate, and
a circuit pattern disposed on a front surface of the resin layer; and
a semiconductor chip that is rectangular in a plan view of the semiconductor device and is bonded to a front surface of the circuit pattern in such a manner that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by at least a predetermined distance, wherein
both the predetermined distance and a thickness of the circuit pattern are greater than or equal to 0.1 of a length of one side of the semiconductor chip, and
in a depth direction of the semiconductor device, a bottommost portion of the circuit pattern is closer to the base plate than is a topmost portion of the resin layer, and a topmost portion of the circuit pattern is farther from the base plate than is the topmost portion of the resin layer.