US 12,469,791 B2
Semiconductor device and method of stacking hybrid substrates with embedded electric components
Yaojian Lin, Jiangsu Province (CN); Linda Pei Ee Chua, Singapore (SG); Ching Meng Fang, Singapore (SG); and Hin Hwa Goh, Singapore (SG)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Sep. 28, 2022, as Appl. No. 17/936,037.
Prior Publication US 2024/0105630 A1, Mar. 28, 2024
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/552 (2006.01); H01L 25/16 (2023.01)
CPC H01L 23/5385 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 23/3135 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/5386 (2013.01); H01L 23/552 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/162 (2013.01); H01L 25/165 (2013.01); H01L 21/563 (2013.01); H01L 24/81 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/182 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/37001 (2013.01)] 21 Claims
OG exemplary drawing
 
12. A semiconductor device, comprising:
a first redistribution layer (RDL) substrate;
a plurality of first conductive pillars formed over a first surface of the first RDL substrate;
a first electrical component disposed over the first surface of the first RDL substrate;
a hybrid substrate bonded to the first RDL substrate;
an encapsulant deposited around the hybrid substrate and first RDL substrate with the first conductive pillars and first electrical component embedded within the encapsulant; and
a first RDL formed over a second surface of the first RDL substrate opposite the first surface of the first RDL substrate.