US 12,469,787 B2
Resist patterned redistribution wiring on copper polyimide via layer
Mukta Ghate Farooq, Hopwell Junction, NY (US); James J. Kelly, Schenectady, NY (US); Eric Perfecto, Poughkeepsie, NY (US); Spyridon Skordas, Troy, NY (US); and Dale Curtis McHerron, Staatsburg, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Feb. 21, 2022, as Appl. No. 17/651,883.
Prior Publication US 2023/0268275 A1, Aug. 24, 2023
Int. Cl. H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 21/02118 (2013.01); H01L 24/05 (2013.01); H01L 2224/024 (2013.01); H01L 2924/01029 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor element, comprising:
a conductive pad;
a first layer of a first polyimide material having an uppermost surface, the first layer including a via trench extending through the first layer from the uppermost surface to the conductive pad;
a second layer of a second polyimide material arranged in direct contact with the uppermost surface, the second layer including a line trench extending to the uppermost surface; and
a conductive structure arranged in the via trench and the line trench, wherein a sidewall of a line of the conductive structure arranged in the line trench includes a cap that is in direct contact with the second polyimide material.