US 12,469,786 B2
Integrated circuit and method for forming the same
Chih-Liang Chen, Hsinchu (TW); and Li-Chun Tien, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 11, 2024, as Appl. No. 18/740,024.
Application 18/740,024 is a continuation of application No. 18/334,136, filed on Jun. 13, 2023, granted, now 12,009,304.
Application 18/334,136 is a continuation of application No. 17/167,646, filed on Feb. 4, 2021, granted, now 11,676,896, issued on Jun. 13, 2023.
Claims priority of provisional application 63/018,277, filed on Apr. 30, 2020.
Prior Publication US 2024/0332187 A1, Oct. 3, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01)
CPC H01L 23/5286 (2013.01) [H01L 21/02603 (2013.01); H01L 21/28518 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 64/62 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a gate structure extending along a first direction parallel with a front-side surface of the substrate;
source/drain structures on opposite sides of the gate structure;
a backside via extending along a second direction parallel with the front-side surface of the substrate but perpendicular to the first direction, wherein the backside via further comprises:
a first portion extending between the source/drain structures along the first direction, the first portion having a first width W1 in the first direction; and
a power rail on a backside surface of the substrate and in contact with the backside via wherein the power rail has a second width W2 along the first direction and wherein the second width and the first width satisfy a second expression W2>W1.