| CPC H01L 23/49838 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/367 (2013.01); H01L 23/49822 (2013.01); H01L 23/49894 (2013.01); H01L 25/0655 (2013.01); H01L 2924/18161 (2013.01)] | 16 Claims |

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1. A semiconductor package, comprising:
a redistribution substrate having first and second surfaces, disposed opposite to each other, the redistribution substrate including an insulating member and a plurality of redistribution layers disposed at a plurality of different levels in the insulating member, respectively, and electrically connected to each other;
a plurality of under-bump metallurgy (UBM) pads disposed in the insulating member and electrically connected to a redistribution layer, among the plurality of redistribution layers, that is adjacent to the first surface of the redistribution substrate, the plurality of UBM pads having lower surfaces with respect to the first surface of the redistribution substrate;
a dummy pattern disposed between the plurality of UBM pads in the insulating member, the dummy pattern having a lower surface located at a level higher than the lower surfaces of the plurality of UBM pads;
a plurality of external connection conductors disposed on the lower surfaces of the plurality of UBM pads respectively, and
at least one semiconductor chip disposed on the second surface of the redistribution substrate and having a plurality of contact pads electrically connected to a redistribution layer, among the plurality of redistribution layers, adjacent to the second surface of the redistribution substrate, wherein:
the insulating member includes a first insulating film covering a first portion of a side surface of each of the plurality of UBM pads, the first portion adjacent the first surface of the redistribution substrate, and a second insulating film covering a second portion of the side surface of each of the plurality of UBM pads, the second portion above the first portion,
the first portion is spaced apart from the first insulating film,
the second portion is in direct contact with the second insulating film, and
the semiconductor package further comprises a UBM seed layer disposed between the first portion and the first insulating film, and disposed between the lower surface of each of the plurality of UBM pads and each of the plurality of external connection conductors.
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