| CPC H01L 23/49 (2013.01) [H01L 21/4853 (2013.01); H01L 21/56 (2013.01); H01L 23/3121 (2013.01); H01R 12/585 (2013.01); H01L 24/32 (2013.01); H01L 2224/32225 (2013.01)] | 9 Claims |

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1. A power semiconductor module, comprising:
a first substrate and a second substrate;
at least one power semiconductor die arranged between a first side of the first substrate and a first side of the second substrate, the at least one power semiconductor die being electrically and thermally coupled to at least the first side of the first substrate;
at least one rivet having a first end arranged on and electrically coupled to the first side of the first substrate; and
an encapsulant encapsulating the at least one power semiconductor die and at least partially encapsulating the at least one rivet and the first and second substrates,
wherein the encapsulant comprises a first side and an opposing second side,
wherein the first substrate is arranged at the first side of the encapsulant and the second substrate is arranged at the second side of the encapsulant,
wherein at least parts of a second side of the first substrate opposing the first side of the first substrate and at least parts of a second side of the second substrate opposing the first side of the second substrate are exposed from the encapsulant,
wherein a second end of the at least one rivet is exposed at the second side of the encapsulant and configured to accept a press fit pin such that the at least one power semiconductor die can be electrically contacted from the outside.
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