US 12,469,769 B2
Electronic packaging structure and manufacturing method thereof
Chin-Sheng Wang, Taoyuan (TW); Ra-Min Tain, Hsinchu County (TW); Chih-Kai Chan, Taoyuan (TW); and Jun-Ho Chen, Taoyuan (TW)
Assigned to Unimicron Technology Corp., Taoyuan (TW)
Filed by Unimicron Technology Corp., Taoyuan (TW)
Filed on Jun. 20, 2023, as Appl. No. 18/337,438.
Application 18/337,438 is a continuation in part of application No. 17/890,279, filed on Aug. 18, 2022.
Claims priority of provisional application 63/425,313, filed on Nov. 15, 2022.
Claims priority of provisional application 63/311,449, filed on Feb. 18, 2022.
Claims priority of application No. 111127319 (TW), filed on Jul. 21, 2022; and application No. 112114187 (TW), filed on Apr. 17, 2023.
Prior Publication US 2023/0335466 A1, Oct. 19, 2023
Int. Cl. H05K 1/18 (2006.01); H01L 23/48 (2006.01); H01L 23/66 (2006.01); H05K 1/02 (2006.01); H05K 3/46 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 23/66 (2013.01); H05K 1/0216 (2013.01); H05K 1/189 (2013.01); H05K 3/4691 (2013.01); H05K 3/4697 (2013.01); H01L 2223/6677 (2013.01); H05K 2201/0154 (2013.01); H05K 2201/09809 (2013.01); H05K 2201/10098 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An electronic packaging structure, comprising:
a first circuit structure, having at least one cavity on a bottom side thereof;
a second circuit structure, the first circuit structure being disposed thereon, wherein the first circuit structure and the second circuit structure are electrically connected to each other; and
at least one electronic device, disposed on the second circuit structure, wherein the electronic device is disposed corresponding to the cavity of the first circuit structure, wherein the first circuit structure comprises at least one coaxial conductive through via, wherein the coaxial conductive through via comprises:
an inner conductive layer;
an outer conductive layer;
a first dielectric layer, disposed between the inner conductive layer and the outer conductive layer
a second dielectric layer, wherein the inner conductive layer is disposed between the first dielectric layer and the second dielectric layer.