US 12,469,766 B2
Power semiconductor device
Ti Chen, Tokyo (JP); Takeshi Tokuyama, Tokyo (JP); Akihiro Namba, Tokyo (JP); Takahiro Araki, Tokyo (JP); and Masanori Sawahata, Tokyo (JP)
Assigned to Hitachi, Ltd., Tokyo (JP)
Appl. No. 18/026,270
Filed by Hitachi, Ltd., Tokyo (JP)
PCT Filed Sep. 17, 2021, PCT No. PCT/JP2021/034343
§ 371(c)(1), (2) Date Mar. 14, 2023,
PCT Pub. No. WO2022/070993, PCT Pub. Date Apr. 7, 2022.
Claims priority of application No. 2020-167143 (JP), filed on Oct. 1, 2020.
Prior Publication US 2023/0361001 A1, Nov. 9, 2023
Int. Cl. H01L 23/473 (2006.01); H01L 23/31 (2006.01); H01L 25/16 (2023.01); H01L 23/00 (2006.01)
CPC H01L 23/473 (2013.01) [H01L 23/3121 (2013.01); H01L 25/16 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A power semiconductor device, comprising:
a power semiconductor element;
a conductive section that transmits a main current of the power semiconductor element;
a circuit component that passes the main current or a control current that controls the power semiconductor element;
a substrate that supports the power semiconductor element, the conductive section, and the circuit component; and
a sealing member that seals the power semiconductor element, the conductive section, the circuit component, and the substrate, wherein
the power semiconductor element and the conductive section constitute a power circuit that outputs an alternating current,
the sealing member forms a first flow path for flowing a refrigerant, and
the first flow path has a first region thermally connected to the power circuit, and a second region thermally connected to the circuit component.