US 12,469,765 B2
Thermally enhanced chip-on-wafer or wafer-on-wafer bonding
Jiongxin Lu, Cupertino, CA (US); Kunzhong Hu, Cupertino, CA (US); Jun Zhai, Cupertino, CA (US); and Sanjay Dabral, Cupertino, CA (US)
Assigned to Apple Inc., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Sep. 22, 2022, as Appl. No. 17/934,346.
Prior Publication US 2024/0105545 A1, Mar. 28, 2024
Int. Cl. H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/3738 (2013.01) [H01L 23/3185 (2013.01); H01L 24/08 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 25/18 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/80379 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a first package level;
a second package level including one or more second-level chiplets;
a heat spreader bonded to the second package level with a metallic layer; and
straight package sidewalls spanning the first package level, the second package level, the metallic layer, and the heat spreader;
wherein the metallic layer comprises:
a first element selected from the group consisting of Cu, Al, Ag, and Au; and
a second element selected from the group consisting of In and Sn, and the second element is completely contained within one or more intermetallic compounds.