| CPC H01L 23/3675 (2013.01) [H01L 21/4882 (2013.01); H01L 23/3677 (2013.01); H01L 23/3735 (2013.01); H01L 23/44 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/0655 (2013.01); H01L 2224/08235 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/16196 (2013.01); H01L 2924/16235 (2013.01); H01L 2924/1632 (2013.01); H01L 2924/16587 (2013.01); H01L 2924/182 (2013.01); H01L 2924/3511 (2013.01)] | 20 Claims |

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1. A package comprising:
a semiconductor device;
an encapsulant laterally surrounding the semiconductor device;
a heat dissipation structure disposed over the semiconductor device and the encapsulant, wherein the heat dissipation structure comprises a plurality of pillars and a porous layer extending over sidewalls of the plurality of pillars; and
an oxide bonding film between the heat dissipation structure and the semiconductor device and between the heat dissipation structure and the encapsulant, wherein the oxide bonding film forms a first bonding interface between the heat dissipation structure and the semiconductor device and forms a second bonding interface between the heat dissipation structure and the encapsulant that extends to a periphery of the encapsulant.
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