US 12,469,747 B2
Selective metal selectivity improvement with RF pulsing
Yi Xu, San Jose, CA (US); Yu Lei, Belmont, CA (US); Zhimin Qi, Fremont, CA (US); Aixi Zhang, Sunnyvale, CA (US); and Xianyuan Zhao, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jan. 4, 2023, as Appl. No. 18/149,829.
Prior Publication US 2024/0222192 A1, Jul. 4, 2024
Int. Cl. H01L 21/68 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76877 (2013.01) [C23C 16/045 (2013.01); C23C 16/405 (2013.01); H01J 37/32146 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/335 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of forming semiconductor device, the method comprising:
exposing a substrate surface to a plasma consisting essentially of hydrogen (H2) and to RF pulses, the substrate surface comprising at least one feature having a bottom surface and at least one sidewall surface, the bottom surface comprising a metal layer with a metal oxide layer formed thereon and the at least one sidewall surface comprising a first dielectric layer and a second dielectric layer, to pre-clean the metal layer and remove the metal oxide layer to form a clean metal surface, wherein after being exposed to the plasma the first dielectric layer and the second dielectric layer are free of defects; and
depositing a metal fill on the clean metal surface.