US 12,469,746 B2
Contact structure of a semiconductor device
Joanna Chaw Yane Yin, Hsinchu (TW); and Hua Feng Chen, Hsinchu (TW)
Assigned to Parabellum Strategic Opportunities Fund LLC, Austin, TX (US)
Filed by Parabellum Strategic Opportunities Fund LLC, Wilmington, DE (US)
Filed on Nov. 27, 2023, as Appl. No. 18/519,862.
Application 18/519,862 is a continuation of application No. 17/664,129, filed on May 19, 2022, granted, now 11,854,875.
Application 17/664,129 is a continuation of application No. 16/933,541, filed on Jul. 20, 2020, granted, now 11,545,390, issued on Jan. 3, 2023.
Application 16/933,541 is a continuation of application No. 15/906,092, filed on Feb. 27, 2018, granted, now 10,720,358, issued on Jul. 21, 2020.
Claims priority of provisional application 62/527,423, filed on Jun. 30, 2017.
Prior Publication US 2024/0096697 A1, Mar. 21, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H01L 21/285 (2006.01)
CPC H01L 21/76865 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 23/53266 (2013.01); H01L 23/535 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6211 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H01L 21/28518 (2013.01); H01L 21/76855 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A fin-type field effect transistor (FinFET), comprising:
a fin structure extending from a semiconductor substrate;
a gate structure formed over the fin structure and a source/drain region adjacent the gate structure;
a first contact structure over the gate structure and extending to interface a top surface of the gate structure, wherein the first contact structure includes
a first tapered sidewall and opposing the first tapered sidewall a second tapered sidewall;
a liner layer having a first surface defining the first tapered sidewall of the first contact structure and a second surface opposing the first surface, wherein the second surface includes a first corner at a first distance from the top surface of the gate structure and a second corner at a second distance from the top surface of the gate structure, the first distance greater than the second distance; and
a conductive layer over the liner layer and interfacing the first corner and the second corner; and
a second contact structure over the source/drain structure and extending to interface a top surface of the source/drain structure, wherein the second contact structure includes
a third tapered sidewall and opposing the third tapered sidewall a fourth tapered sidewall;
another liner layer having a first surface defining the second tapered sidewall of the first contact structure and a second surface opposing the first surface, wherein the second surface includes a third corner at a third distance from the top surface of the source/drain structure and a fourth corner at a fourth distance from the top surface of the source/drain structure, the third distance greater than the fourth distance; and
another conductive layer over the another liner layer and interfacing the third corner and the fourth corner.