US 12,469,744 B2
Method for forming FinFET with source/drain regions comprising an insulator layer
Tzu-Ching Lin, Hsinchu (TW); and Tuoh Bin Ng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 8, 2023, as Appl. No. 18/446,160.
Application 17/316,119 is a division of application No. 16/442,216, filed on Jun. 14, 2019, granted, now 11,004,725, issued on May 11, 2021.
Application 18/446,160 is a continuation of application No. 17/316,119, filed on May 10, 2021, granted, now 11,823,949.
Prior Publication US 2024/0021466 A1, Jan. 18, 2024
Int. Cl. H01L 21/764 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/00 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01)
CPC H01L 21/764 (2013.01) [H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 62/021 (2025.01); H10D 62/116 (2025.01); H10D 62/151 (2025.01); H10D 64/017 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a fin over a substrate, the fin comprising a semiconductor material;
forming a first gate on a top surface of the fin and extending along sidewalls of the fin;
forming gate spacers along sidewalls of the first gate;
forming a first recess in the fin adjacent a first one of the gate spacers;
forming a first insulator layer in the first recess, wherein after the first insulator layer is formed, the fin being exposed at sidewalls of the first recess;
growing a first epitaxial layer from the exposed fin in the first recess; and
growing a second epitaxial layer over the first insulator layer and the first epitaxial layer in the first recess.