US 12,469,740 B2
Vacuum chucking of a substrate within a carrier
James D. Strassner, Austin, TX (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jan. 30, 2023, as Appl. No. 18/103,302.
Claims priority of provisional application 63/309,788, filed on Feb. 14, 2022.
Prior Publication US 2023/0260824 A1, Aug. 17, 2023
Int. Cl. H01L 21/687 (2006.01); B32B 3/26 (2006.01); B32B 7/12 (2006.01); B32B 9/04 (2006.01)
CPC H01L 21/68785 (2013.01) [B32B 3/266 (2013.01); B32B 7/12 (2013.01); B32B 9/04 (2013.01); B32B 2307/732 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A substrate carrier, configured for use in a semiconductor processing chamber, comprising:
a first sheet comprising:
a first top surface;
a first bottom surface; and
a plurality of outer openings formed between the first top surface and the first bottom surface and around a central axis normal to the first top surface;
a second sheet disposed on top of the first sheet comprising:
a second top surface;
a second bottom surface; and
a plurality of radial passages extending radially outward from the central axis, an outer distal end of each radial passage of the plurality of radial passages overlapping one or more of the plurality of outer openings while an inner distal end of each radial passage is radially inward of the one or more of the plurality of outer openings;
a third sheet disposed on top of the second sheet comprising:
a third top surface;
a third bottom surface;
a plurality of inner openings formed between the third top surface and the third bottom surface and around the central axis and overlapping the inner distal end of one or more of the plurality of radial passages; and
one or more pocket segments disposed on top of the third top surface sheet radially outward from the plurality of inner openings and arranged to form a substrate pocket, the third top surface at least partially defining a bottom surface of the substrate pocket.