| CPC H01L 21/68764 (2013.01) [C23C 16/45544 (2013.01); C23C 16/45551 (2013.01); C23C 16/4584 (2013.01); C23C 16/4588 (2013.01); H01L 21/02104 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/28506 (2013.01)] | 17 Claims |

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1. A method comprising:
providing a processing chamber comprising x number of spatially separated isolated processing stations within the processing chamber, x being an integer in a range of from 4 to 10, the processing chamber having a processing chamber temperature and each processing station independently having a processing station temperature, the processing chamber temperature different from the processing station temperatures;
rotating a substrate support assembly within the processing chamber, the substrate support assembly having a plurality of substrate support surfaces aligned with the x number of spatially separated isolated processing stations rx times so that each substrate support surface rotates (360/x) degrees in a first direction to a location of an adjacent substrate support surface, r being a whole number greater than or equal to 1, each of the plurality of substrate support surfaces respectively comprising a heater and having a sealing platform connected to the heater at a position below and surrounding the heater so that a top surface of the sealing platform is below a top surface of the heater, the sealing platform configured to provide a seal or barrier to minimize gas flowing to a region below the substrate support assembly; and
rotating the substrate support assembly rx times within the processing chamber so that each substrate support surface rotates (360/x) degrees in a second direction to the location of the adjacent substrate support surface.
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