US 12,469,735 B2
3D semiconductor device and structure with metal layers and memory cells
Zvi Or-Bach, Haifa (IL); Brian Cronquist, Klamath Falls, OR (US); and Deepak C. Sekar, Sunnyvale, CA (US)
Assigned to Monolithic 3D Inc., Allen, TX (US)
Filed by Monolithic 3D Inc., Klamath Falls, OR (US)
Filed on Dec. 21, 2024, as Appl. No. 18/991,504.
Application 18/991,504 is a continuation in part of application No. 18/829,079, filed on Sep. 9, 2024, granted, now 12,243,765.
Application 18/991,504 is a continuation in part of application No. 18/736,423, filed on Jun. 6, 2024, granted, now 12,125,737, issued on Oct. 22, 2024.
Application 18/829,079 is a continuation in part of application No. 18/677,553, filed on May 29, 2024, granted, now 12,144,190, issued on Nov. 12, 2024.
Application 18/677,553 is a continuation in part of application No. 18/424,790, filed on Jan. 27, 2024, granted, now 12,068,187, issued on Aug. 20, 2024.
Application 18/424,790 is a continuation in part of application No. 18/382,468, filed on Oct. 20, 2023, granted, now 11,923,230, issued on Mar. 5, 2024.
Application 18/382,468 is a continuation in part of application No. 18/228,675, filed on Aug. 1, 2023, granted, now 11,830,757, issued on Nov. 28, 2023.
Application 18/228,675 is a continuation in part of application No. 18/092,337, filed on Jan. 1, 2023, granted, now 11,784,082, issued on Oct. 10, 2023.
Application 18/092,337 is a continuation in part of application No. 17/942,109, filed on Sep. 9, 2022, granted, now 12,154,817, issued on Nov. 26, 2024.
Application 17/942,109 is a continuation in part of application No. 17/340,004, filed on Jun. 5, 2021, granted, now 11,482,438, issued on Oct. 25, 2022.
Application 17/340,004 is a continuation in part of application No. 16/537,564, filed on Aug. 10, 2019, granted, now 12,362,219.
Application 16/537,564 is a continuation in part of application No. 15/460,230, filed on Mar. 16, 2017, granted, now 10,497,713, issued on Dec. 3, 2019.
Application 15/460,230 is a continuation in part of application No. 14/821,683, filed on Aug. 7, 2015, granted, now 9,613,844, issued on Apr. 4, 2017.
Application 14/821,683 is a continuation in part of application No. 13/492,395, filed on Jun. 8, 2012, granted, now 9,136,153, issued on Sep. 15, 2015.
Application 13/492,395 is a continuation of application No. 13/273,712, filed on Oct. 14, 2011, granted, now 8,273,610, issued on Sep. 25, 2012.
Application 13/273,712 is a continuation in part of application No. 13/016,313, filed on Jan. 28, 2011, granted, now 8,362,482, issued on Jan. 29, 2013.
Application 13/016,313 is a continuation in part of application No. 12/970,602, filed on Dec. 16, 2010, granted, now 9,711,407, issued on Jul. 18, 2017.
Application 12/970,602 is a continuation in part of application No. 12/949,617, filed on Nov. 18, 2010, granted, now 8,754,533, issued on Jun. 17, 2014.
Application 17/340,004 is a continuation in part of application No. 17/147,320, filed on Jan. 12, 2021, granted, now 11,004,719, issued on May 11, 2021.
Application 17/147,320 is a continuation in part of application No. 16/537,564, filed on Aug. 10, 2019, granted, now 12,362,219.
Application 16/537,564 is a continuation in part of application No. 15/460,230, filed on Mar. 16, 2017, granted, now 10,497,713, issued on Dec. 3, 2019.
Application 15/460,230 is a continuation in part of application No. 14/821,683, filed on Aug. 7, 2015, granted, now 9,613,844, issued on Apr. 4, 2017.
Application 14/821,683 is a continuation in part of application No. 13/492,395, filed on Jun. 8, 2012, granted, now 9,136,153, issued on Sep. 15, 2015.
Application 13/492,395 is a continuation in part of application No. 13/273,712, filed on Oct. 14, 2011, granted, now 8,273,610, issued on Sep. 25, 2012.
Application 13/273,712 is a continuation in part of application No. 13/016,313, filed on Jan. 28, 2011, granted, now 8,362,482, issued on Jan. 29, 2013.
Application 13/016,313 is a continuation in part of application No. 12/970,602, filed on Dec. 16, 2010, granted, now 9,711,407, issued on Jul. 18, 2017.
Application 12/970,602 is a continuation in part of application No. 12/949,617, filed on Nov. 18, 2010, granted, now 8,754,533, issued on Jun. 17, 2014.
Prior Publication US 2025/0132187 A1, Apr. 24, 2025
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/683 (2006.01); G11C 8/16 (2006.01); H01L 21/74 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/525 (2006.01); H10B 10/00 (2023.01); H10B 12/00 (2023.01); H10B 20/00 (2023.01); H10B 20/25 (2023.01); H10B 41/20 (2023.01); H10B 41/40 (2023.01); H10B 41/41 (2023.01); H10B 43/20 (2023.01); H10B 43/40 (2023.01); H10D 10/01 (2025.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 30/68 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 84/90 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01); H10D 88/00 (2025.01); H10D 89/10 (2025.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)
CPC H01L 21/6835 (2013.01) [G11C 8/16 (2013.01); H01L 21/743 (2013.01); H01L 21/76254 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5252 (2013.01); H10B 10/00 (2023.02); H10B 10/125 (2023.02); H10B 12/053 (2023.02); H10B 12/09 (2023.02); H10B 12/20 (2023.02); H10B 12/50 (2023.02); H10B 20/00 (2023.02); H10B 20/25 (2023.02); H10B 41/20 (2023.02); H10B 41/40 (2023.02); H10B 41/41 (2023.02); H10B 43/20 (2023.02); H10B 43/40 (2023.02); H10D 10/051 (2025.01); H10D 30/0411 (2025.01); H10D 30/0413 (2025.01); H10D 30/0512 (2025.01); H10D 30/60 (2025.01); H10D 30/681 (2025.01); H10D 30/69 (2025.01); H10D 30/711 (2025.01); H10D 30/792 (2025.01); H10D 64/027 (2025.01); H10D 64/513 (2025.01); H10D 84/0172 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01); H10D 84/907 (2025.01); H10D 84/998 (2025.01); H10D 86/01 (2025.01); H10D 86/201 (2025.01); H10D 88/00 (2025.01); H10D 88/01 (2025.01); H10D 89/10 (2025.01); H01L 23/3677 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2221/68368 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/83894 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/01002 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01018 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01066 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/01077 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/12033 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/1579 (2013.01); H01L 2924/16152 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/30105 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01); H10B 12/05 (2023.02); H10D 86/0214 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A 3D semiconductor device, the device comprising:
a first level comprising a first single crystal layer, said first level comprising first transistors,
wherein each of said first transistors comprises a single crystal channel;
a first metal layer;
a second metal layer overlaying said first metal layer;
a second level comprising a plurality of second transistors, said second level overlaying said first level;
a third level comprising a plurality of third transistors, said third level overlaying said second level;
a fourth level comprising a plurality of fourth transistors, said fourth level overlaying said third level,
wherein said second level comprises a plurality of first memory cells,
wherein each of said plurality of first memory cells comprises at least one of said second transistors,
wherein said fourth level comprises a plurality of second memory cells,
wherein each of said plurality of second memory cells comprises at least one of said fourth transistors,
wherein said first level comprises memory control circuits,
wherein at least one of said second transistors comprises a metal gate,
wherein said memory control circuits control writing to said plurality of second memory cells, and
wherein at least one of said second transistors comprises a hafnium oxide gate dielectric.