US 12,469,721 B2
Apparatus for manufacturing a semiconductor device and method of manufacturing the apparatus
Hwanyeol Park, Seoul (KR); Kyung Nam Kang, Hwaseong-si (KR); Jeong Hoon Nam, Suwon-si (KR); Se Jin Kyung, Seoul (KR); Dae Wee Kong, Yongin-si (KR); and Tae-Min Kim, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 4, 2022, as Appl. No. 17/736,229.
Claims priority of application No. 10-2021-0094041 (KR), filed on Jul. 19, 2021.
Prior Publication US 2023/0020305 A1, Jan. 19, 2023
Int. Cl. H01L 21/687 (2006.01); C22C 21/00 (2006.01); C23C 16/30 (2006.01); C23C 16/458 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/67098 (2013.01) [C22C 21/00 (2013.01); C22C 21/003 (2013.01); C23C 16/303 (2013.01); C23C 16/4581 (2013.01); C23C 16/4586 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An apparatus for manufacturing a semiconductor device, the apparatus comprising:
a heater configured to heat a target for the semiconductor device, the heater including an aluminum nitride;
wherein the heater has a coating layer on the heater, the coating layer including:
a base layer, and
a passivation layer on the base layer, the passivation layer having a first nitrogen content higher than a second nitrogen content of the base layer, and wherein:
the base layer includes a first layer having a first aluminum content and a second layer on the first layer, the second layer having a second aluminum content different from the first aluminum content,
the first layer contacts the heater, and
the first aluminum content of the first layer is higher than the second aluminum content of the second layer; and
each layer of the coating layer independently includes a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N) represented by Chemical Formula:
MxAl1-xNy,  [Chemical Formula]
wherein x and y satisfy: 0<x<1 and y≥1.