	US 12,469,717 B2
	Systems, methods, and semiconductor devices
Tz-Shian Chen, Hsinchu (TW); Li-Ting Wang, Hsinchu (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/459,043.
Prior Publication US 2023/0061802 A1, Mar. 2, 2023
Int. Cl. H01L 21/324 (2006.01); H01L 21/66 (2006.01)

CPC H01L 21/324 (2013.01) [H01L 22/12 (2013.01)]

18 Claims

1. A method of manufacturing a semiconductor device, the method comprising:

determining a first reflectivity of a first anneal region on a wafer;

determining a second reflectivity of a second anneal region on the wafer, wherein the second anneal region is located within but has a lesser area than the first anneal region;

after determining the first reflectivity and the second reflectivity, performing an initial laser shot on the first anneal region and the second anneal region, wherein a power of the initial laser shot on the first anneal region is set in accordance with the first reflectivity;

after performing the initial laser shot on the first anneal region and the second anneal region, measuring a first temperature of the first anneal region; and

after determining the first reflectivity and the second reflectivity, performing an initial laser shot on the second anneal region, wherein a power of the initial laser shot on the second anneal region is set in accordance with the second reflectivity and the first temperature of the first anneal region.

9. A method of manufacturing a semiconductor device, the method comprising:

performing a measuring process on a wafer, wherein the measuring process comprises:

impinging a first laser on a first anneal region on the wafer and on a second anneal region of the wafer, the second anneal region being different from the first anneal region; and

determining a first reflectivity of the first anneal region and a second reflectivity of the second anneal region with a pyrometer;

determining a first power setting for an initial laser shot on the first anneal region using the first reflectivity;

performing the initial laser shot on the first anneal region with the first power setting;

measuring a temperature of the first anneal region after the performing the initial laser shot;

determining a temperature error value for the first anneal region based upon a difference between the temperature of the first anneal region and a desired temperature of the first anneal region;

determining a second power setting for a subsequent laser shot on the first anneal region using the first reflectivity and the temperature of the first anneal region; and

performing the subsequent laser shot on the first anneal region with the second power setting;

determining a third power setting for a second initial laser shot on the second anneal region using the second reflectivity and the temperature error value for the first anneal region; and

performing the second initial laser shot on the second anneal region with the third power setting.

13. A method of manufacturing a semiconductor device, the method comprising:

inserting a wafer into an annealing system;

moving the wafer to a process chamber using a robot;

determining a first reflectivity of a first anneal region on the wafer and determining a second reflectivity of a second anneal region on the wafer using a controller, wherein the second anneal region is within but has a lesser area than the first anneal region;

after determining the first reflectivity of the first anneal region, annealing the first anneal region with an initial laser shot, wherein a power of the initial laser shot is set by the controller using the first reflectivity;

measuring a temperature of the first anneal region and feeding the temperature of the first anneal region back to the controller; and

annealing the second anneal region with an initial laser shot on the second anneal region, wherein a power of the initial laser shot on the second anneal region is set by the controller using the second reflectivity and a temperature error value obtained from the first anneal region.