US 12,469,716 B2
Plasma etching method and method for manufacturing semiconductor element
Kazuma Matsui, Tokyo (JP); and Yuki Oka, Tokyo (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Appl. No. 18/012,445
Filed by SHOWA DENKO K.K., Tokyo (JP)
PCT Filed Jun. 24, 2021, PCT No. PCT/JP2021/023959
§ 371(c)(1), (2) Date Dec. 22, 2022,
PCT Pub. No. WO2022/044518, PCT Pub. Date Mar. 3, 2022.
Claims priority of application No. 2020-145948 (JP), filed on Aug. 31, 2020.
Prior Publication US 2024/0038546 A1, Feb. 1, 2024
Int. Cl. H01L 21/3213 (2006.01); C09K 13/00 (2006.01); C23F 1/12 (2006.01); G03F 7/36 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/467 (2006.01); H10F 71/00 (2025.01)
CPC H01L 21/32136 (2013.01) [C09K 13/00 (2013.01); C23F 1/12 (2013.01); G03F 7/36 (2013.01); H01J 37/32422 (2013.01); H01L 21/3065 (2013.01); H01L 21/467 (2013.01); H10F 71/1385 (2025.01); H01J 2237/3346 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma etching method comprising:
an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in a molecule of the unsaturated compound into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in a presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object, wherein
the etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.