US 12,469,715 B2
Dry etching with etch byproduct self-cleaning
Zhonghua Yao, Santa Clara, CA (US); Qian Fu, Pleasanton, CA (US); Mark J. Saly, Santa Clara, CA (US); Yang Yang, Cupertino, CA (US); Jeffrey W. Anthis, Redwood City, CA (US); David Knapp, Santa Clara, CA (US); and Rajesh Sathiyanarayanan, Bengaluru (IN)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 12, 2023, as Appl. No. 18/221,063.
Claims priority of application No. 202241058528 (IN), filed on Oct. 13, 2022.
Prior Publication US 2024/0128091 A1, Apr. 18, 2024
Int. Cl. H01L 21/311 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/31144 (2013.01) [H01L 21/31116 (2013.01); H01L 21/67069 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method comprising:
providing, within an etch chamber, a base structure comprising a target layer disposed on a substrate, and an etch mask disposed on the target layer, wherein the target layer comprises carbon;
dry etching, within the etch chamber at a sub-zero degree Celsius temperature, the target layer using thionyl chloride to obtain a processed base structure, the processed base structure comprising a plurality of features and a plurality of openings defined by the etch mask, wherein each feature of the plurality of features has an aspect ratio greater than or equal to about 60:1; and
removing the processed base structure from the etch chamber.