	US 12,469,713 B2
	Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Arito Ogawa, Toyama (JP); and Shogo Hayasaka, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Mar. 19, 2021, as Appl. No. 17/206,902.
Claims priority of application No. 2020-054333 (JP), filed on Mar. 25, 2020.
Prior Publication US 2021/0305058 A1, Sep. 30, 2021
Int. Cl. H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)

CPC H01L 21/31122 (2013.01) [H01L 21/02356 (2013.01); H01L 21/67069 (2013.01)]

17 Claims

1. A method of processing a substrate, comprising:

etching an oxide film, which is formed on the substrate and contains an element that is not oxygen, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:

(1) supplying a boron-containing gas to the oxide film;

(2) supplying a halide gas to the oxide film; and

(3) supplying a gas containing a hydrogen group and the element to the oxide film,

wherein the boron-containing gas further contains a halogen element, and

wherein the halide gas includes at least one selected from the group of a HF gas, a ClF₃gas, a Cl₂gas, a NF₃gas, a F₂gas and a mixed gas of a F₂gas and a NO gas.