US 12,469,711 B2
Etching method
Taichi Suzuki, Kanagawa (JP); Yasuhiro Morikawa, Kanagawa (JP); Kenta Doi, Kanagawa (JP); and Toshiyuki Nakamura, Kanagawa (JP)
Assigned to ULVAC, INC., Kanagawa (JP)
Filed by ULVAC, INC., Kanagawa (JP)
Filed on May 15, 2024, as Appl. No. 18/665,377.
Application 18/665,377 is a continuation of application No. 17/728,524, filed on Apr. 25, 2022, granted, now 12,020,942.
Claims priority of application No. 2021-075098 (JP), filed on Apr. 27, 2021.
Prior Publication US 2024/0304453 A1, Sep. 12, 2024
Int. Cl. H01L 21/3065 (2006.01); B81C 1/00 (2006.01); C23C 14/02 (2006.01); C23C 14/34 (2006.01); H01J 37/32 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/30655 (2013.01) [B81C 1/00531 (2013.01); B81C 1/00619 (2013.01); C23C 14/021 (2013.01); C23C 14/34 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0112 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/014 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01); H01J 2237/3342 (2013.01)] 7 Claims
OG exemplary drawing
 
1. An etching method comprising:
a resist pattern-forming step of forming a resist layer on a target object, the target object being made of silicon, the resist layer being formed of a resin, the resist layer having a resist pattern;
a deposition step forming a deposition layer on the target object using a first gas in accordance with the resist pattern, the first gas containing fluorocarbon,
an etching step of etching the target object via the resist layer having the resist pattern, the etching step being to be carried out after the deposition step,
the etching step including a dry etching treatment carried out with respect to the target object using a second gas in accordance with the resist pattern;
an ashing step to be carried out after the etching step, the ashing step using a third gas; and
a resist protective film-forming step of forming a resist protective film on the resist layer, wherein
the etching step is repetitively carried out multiple times,
a processing gas used in the resist protective film-forming step, that includes a gas capable of forming SixOyαz, wherein a is any one of F, Cl, H, and CkHl; and wherein
each of x, y, z, k, and l is a selected non-zero value; and
wherein after the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.