US 12,469,710 B2
Method of manufacturing a semiconductor device
Chun Hsiung Tsai, Xinpu Township (TW); Yu-Ming Lin, Hsinchu (TW); Kuo-Feng Yu, Zhudong Township (TW); Ming-Hsi Yeh, Hsinchu (TW); Shahaji B. More, Hsinchu (TW); Chandrashekhar Prakash Savant, Hsinchu (TW); Chih-Hsin Ko, Fongshan (TW); and Clement Hsingjen Wann, Carmel, NY (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 13, 2024, as Appl. No. 18/603,866.
Application 18/603,866 is a continuation of application No. 17/865,311, filed on Jul. 14, 2022, granted, now 11,972,982.
Application 17/865,311 is a continuation of application No. 17/168,047, filed on Feb. 4, 2021, granted, now 11,404,322, issued on Aug. 2, 2022.
Claims priority of provisional application 63/022,411, filed on May 8, 2020.
Prior Publication US 2024/0258174 A1, Aug. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H01L 21/3065 (2013.01) [H01L 21/02057 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
etching a substrate to form a fin structure comprising a first plurality of fins and a second plurality of fins over the substrate;
eliminating damage to the plurality fins caused by the etching the substrate by heating the fin structure at temperature in a range from 900° C. to 1100° C. for 1 sec to 20 sec; and
after the eliminating damage to the plurality of fins, forming an isolation insulating layer such that upper portions of the first plurality of fins and second plurality of fins protrudes from the isolation insulating layer.