US 12,469,705 B2
Vertical trench device configurations for radiation-environment applications
Sudarsan Uppili, Portland, OR (US); David Lee Snyder, Beaverton, OR (US); and Scott Joseph Alberhasky, Hillsboro, OR (US)
Assigned to SCDevice LLC, Portland, OR (US)
Filed by SCDevice LLC, Portland, OR (US)
Filed on Apr. 14, 2023, as Appl. No. 18/135,099.
Claims priority of provisional application 63/336,575, filed on Apr. 29, 2022.
Prior Publication US 2023/0352304 A1, Nov. 2, 2023
Int. Cl. H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/285 (2006.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 30/01 (2025.01); H10D 30/87 (2025.01); H10D 62/83 (2025.01); H10D 62/832 (2025.01)
CPC H01L 21/26513 (2013.01) [H01L 21/266 (2013.01); H01L 21/28537 (2013.01); H10D 8/051 (2025.01); H10D 8/60 (2025.01); H10D 30/061 (2025.01); H10D 30/871 (2025.01); H10D 62/83 (2025.01); H10D 62/8325 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A process for forming a semiconductor device, with a well region, comprising:
implanting a first region of semiconductor material using a first implant and a first mask;
forming, after the first implant, at least one spacer on the first mask; and
forming a trench in the first region of semiconductor material using the at least one spacer and the first mask;
wherein the well region of the semiconductor device occupies at least a portion of the first region of semiconductor material that was implanted with the first implant.