US 12,469,701 B2
Patterning features with metal based resists
Katie Lutker-Lee, Albany, NY (US); and Angelique Raley, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Apr. 8, 2022, as Appl. No. 17/658,538.
Prior Publication US 2023/0326755 A1, Oct. 12, 2023
Int. Cl. H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/0337 (2013.01) [H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
receiving a substrate in a plasma chamber, the substrate comprising a first masking layer comprising a metal-based resist (MBR) and an underlying layer disposed between a substrate layer and the first masking layer;
depositing selectively, a second masking layer on the first masking layer using a first plasma comprising a source gas that chemically and selectively reacts with the MBR relative to the underlying layer; and
etching a portion of the underlying layer to form a patterned underlying layer using the second masking layer and the first masking layer as an etch mask.