US 12,469,699 B2
Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles
Rachael L. Myers-Ward, Arlington, VA (US); Jeehwan Kim, Cambridge, MA (US); Kuan Qiao, Cambridge, MA (US); Wei Kong, Cambridge, MA (US); David Kurt Gaskill, Alexandria, VA (US); Takuji Maekawa, Kyoto (JP); and Noriyuki Masago, Kyoto (JP)
Assigned to Massachusetts Institute of Technology, Cambridge, MA (US); The Government of the United States of America, as Represented by the Secretary of the Navy, Arlington, VA (US); and ROHM Co., Ltd., Kyoto (JP)
Filed by Massachusetts Institute of Technology, Cambridge, MA (US); The Government of the United States of America, as Represented by the Secretary of the Navy, Arlington, VA (US); and ROHM Co., Ltd., Kyoto (JP)
Filed on Oct. 13, 2023, as Appl. No. 18/486,471.
Application 18/486,471 is a continuation of application No. 17/254,623, abandoned, previously published as PCT/US2019/038461, filed on Jun. 21, 2019.
Claims priority of provisional application 62/688,472, filed on Jun. 22, 2018.
Prior Publication US 2024/0153763 A1, May 9, 2024
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02529 (2013.01) [H01L 21/02378 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02444 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02598 (2013.01); H01L 21/0262 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a silicon carbide (SiC) film over a layer comprising graphene and/or hexagonal boron nitride (hBN) that is over a substrate, wherein the SiC film is single crystalline;
wherein at least a portion of the formation of the SiC film occurs in the presence of a gaseous material comprising an inert gas, and
wherein, during the forming of the SiC film, the temperature of an environment of the layer comprising the graphene and/or hBN over the substrate is ramped from a first temperature to a second, higher temperature, wherein the first temperature and the second temperature are greater than or equal to 1350° C. and less than or equal to 1800° C.